國(guó)家第三代半導(dǎo)體技術(shù)創(chuàng)新中心（南京）（以下簡(jiǎn)稱(chēng)“南京中心”）是國(guó)家級(jí)創(chuàng)新平臺(tái)。

南京中心坐落于南京市江寧區(qū)，充分發(fā)揮南京豐富的基礎(chǔ)研究、應(yīng)用基礎(chǔ)研究和技術(shù)創(chuàng)新資源優(yōu)勢(shì)，主攻電力電子、光電子、射頻電子等應(yīng)用領(lǐng)域。南京中心以關(guān)鍵技術(shù)研發(fā)為核心使命，產(chǎn)學(xué)研協(xié)同推動(dòng)科技成果轉(zhuǎn)移轉(zhuǎn)化與產(chǎn)業(yè)化，為區(qū)域和產(chǎn)業(yè)發(fā)展提供源頭技術(shù)供給，為科技型中小企業(yè)孵化、培育和發(fā)展提供創(chuàng)新服務(wù)，為支撐產(chǎn)業(yè)向中高端邁進(jìn)、實(shí)現(xiàn)高質(zhì)量發(fā)展發(fā)揮戰(zhàn)略引領(lǐng)作用。

南京中心現(xiàn)擁有國(guó)內(nèi)頂尖的第三代半導(dǎo)體器件研發(fā)技術(shù)團(tuán)隊(duì)，核心技術(shù)全國(guó)領(lǐng)先，國(guó)際先進(jìn)。該團(tuán)隊(duì)由中國(guó)電科首席專(zhuān)家柏松領(lǐng)銜，擁有博士以上學(xué)歷13人，高級(jí)以上職稱(chēng)12人。

Introduction

National Center of Technology Innovation for Wide BandGap Semiconductors (Nanjing) is a state-level technology innovation center， located in Jiangning District, Nanjing，Nanjing Center was set up to develope power electronics, optoelectronics, RF electronics and other electronic device technologies，giving its full play to the local advantages in fundamental researches, applied researches and technological innovation ability. Nanjing Center will cooperate together with industries, universities and research institutes to promote the technological progress and the achievement transformation of science and technology. Nanjing Center will continuously commit itself to providing technical sources for regional and industrial development, offering services for cultivating and developing small-and medium-sized enterprises, leading industries to middle and high-end and achieve high-quality development.

Nanjing Center has established an R&D team which is among the best in China for wide bandgap semiconductor devices. The research team led by Bai Song, chief expert of CETC, consists of over ten doctors, and a number of senior engineers.